Growth of intermetallics between Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layered structures

被引：20

作者：

Horvath, Barbara ^{[1
]}

Illes, Balazs ^{[2
]}

Shinohara, Tadashi ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050035, Japan

[2] Budapest Univ Technol & Econ, Dept Elect Technol, H-1111 Budapest, Hungary

来源：

THIN SOLID FILMS | 2014年 / 556卷

关键词：

Electron microscopy; Intermetallics; Interfaces; Tin whisker; COMPOUND FORMATION; INTERFACE REACTIONS; SN-3.5AG SOLDER; TIN WHISKERS; SN WHISKERS; CU-SN; NI; SILVER; 95.5SN-3.9AG-0.6CU; INTERDIFFUSION;

D O I：

10.1016/j.tsf.2014.01.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8-10 mu m thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5-2 mu m thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 degrees C and 125 degrees C. Intermetallic layer growth was checked by focused ion beam-scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu6Sn5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu6Sn5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：345 / 353

页数：9

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