Investigation of Electrophysical Properties of ITO Films
被引:3
|
作者:
Zhidik, Yu. S.
论文数: 0引用数: 0
h-index: 0
机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Russian Acad Sci, Siberian Branch, VE Zuev Inst Atmospher Opt, Tomsk, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Zhidik, Yu. S.
[1
,2
]
Troyan, P. E.
论文数: 0引用数: 0
h-index: 0
机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Troyan, P. E.
[1
]
Kozik, V. V.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Res Tomsk State Univ, Tomsk, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Kozik, V. V.
[3
]
Kozyukhin, S. A.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Res Tomsk State Univ, Tomsk, Russia
Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Kozyukhin, S. A.
[3
,4
]
Zabolotskaya, A. V.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Res Tomsk State Univ, Tomsk, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Zabolotskaya, A. V.
[3
]
Kuznetsova, S. A.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Res Tomsk State Univ, Tomsk, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk, Russia
Kuznetsova, S. A.
[3
]
机构:
[1] Tomsk State Univ Control Syst & Radioelect, Tomsk, Russia
[2] Russian Acad Sci, Siberian Branch, VE Zuev Inst Atmospher Opt, Tomsk, Russia
[3] Natl Res Tomsk State Univ, Tomsk, Russia
[4] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow, Russia
The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.