Investigation of Electrophysical Properties of ITO Films

被引:3
|
作者
Zhidik, Yu. S. [1 ,2 ]
Troyan, P. E. [1 ]
Kozik, V. V. [3 ]
Kozyukhin, S. A. [3 ,4 ]
Zabolotskaya, A. V. [3 ]
Kuznetsova, S. A. [3 ]
机构
[1] Tomsk State Univ Control Syst & Radioelect, Tomsk, Russia
[2] Russian Acad Sci, Siberian Branch, VE Zuev Inst Atmospher Opt, Tomsk, Russia
[3] Natl Res Tomsk State Univ, Tomsk, Russia
[4] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow, Russia
基金
俄罗斯基础研究基金会;
关键词
ITO films; electrical conductivity; resistance; charge carrier mobility; charge carrier concentration;
D O I
10.1007/s11182-020-02167-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.
引用
收藏
页码:1139 / 1143
页数:5
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