Investigation of Electrophysical Properties of ITO Films

被引：3

作者：

Zhidik, Yu. S. ^{[1
,2
]}

Troyan, P. E. ^{[1
]}

Kozik, V. V. ^{[3
]}

Kozyukhin, S. A. ^{[3
,4
]}

Zabolotskaya, A. V. ^{[3
]}

Kuznetsova, S. A. ^{[3
]}

机构：

[1] Tomsk State Univ Control Syst & Radioelect, Tomsk, Russia

[2] Russian Acad Sci, Siberian Branch, VE Zuev Inst Atmospher Opt, Tomsk, Russia

[3] Natl Res Tomsk State Univ, Tomsk, Russia

[4] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2020年 / 63卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

ITO films; electrical conductivity; resistance; charge carrier mobility; charge carrier concentration;

D O I：

10.1007/s11182-020-02167-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.

引用

页码：1139 / 1143

页数：5

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