All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics

被引:36
作者
Sun, Dong-Ming [1 ,2 ]
Liu, Chang [1 ,2 ]
Ren, Wen-Cai [1 ,2 ]
Cheng, Hui-Ming [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
[2] Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China
[3] Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
来源
ADVANCED ELECTRONIC MATERIALS | 2016年 / 2卷 / 11期
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; REDUCED GRAPHENE OXIDE; SINGLE-WALLED NANOTUBES; HIGH-PERFORMANCE; LARGE-SCALE; SELECTIVE DISPERSION; BALLISTIC TRANSPORT; THRESHOLD VOLTAGE; CONTROLLED GROWTH; CONDUCTIVE FILMS;
D O I
10.1002/aelm.201600229
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and flexibility. Thin films of carbon nanotubes or graphene are promising for fabricating high-quality semiconducting channels and transparent conductive films, as electrodes and interconnects in thin-film transistors and integrated circuits, which allows the construction of all-carbon electronics. This article reviews the main approaches to and important findings in the fabrication of flexible and transparent electrodes and channels for thin-film transistors, and highlights recent achievements of flexible and transparent all-carbon thin-film transistors, in terms of design, fabrication and performance evaluation. This all-carbon strategy opens up a way to achieve extremely flexible, transparent and stretchable electronics with relatively low cost and fast fabrication techniques, compared to the traditional rigid silicon, metal and metal oxide electronics.
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页数:22
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