Influence of substrates on the structural and morphological properties of RF sputtered ITO thin films for photovoltaic application

被引：60
|
作者：
Manavizadeh, Negin [1 ,2 ]
Boroumand, Farhad Akbari [1 ]
Asl-Soleimani, Ebrahim [2 ]
Raissi, Farshid [1 ]
Bagherzadeh, Sheida [2 ]
Khodayari, Alireza [2 ]
Rasouli, Mohammad Amin [1 ]
机构：
[1] Univ Technol, Dept Elect Engn, Tehran, Iran
[2] Univ Tehran, Dept Elect & Comp Engn, Thin Film Lab, Tehran, Iran
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 07期
关键词：
Mono and multicrystalline; RF sputtering; Structural and morphological properties; ITO thin films; Annealing in vacuum; INDIUM-TIN-OXIDE; PULSED-LASER DEPOSITION; OPTICAL-PROPERTIES; TRANSPARENT; GROWTH;
D O I：
10.1016/j.tsf.2008.11.027
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline ITO films were deposited by RF sputtering on three different substrates of glass, p-type (100) and multicrystalline textured silicon wafers. Properties of ITO films were analyzed by XRD, SEM, four point probe system and UV/VIS/IR spectrometer. The ITO film on mono and multi-Si crystallizes in a three-dimensional manner, and a granular crystalline structure is formed with a (222) XRD peak, while the ITO film on glass shows strong XRD (400) peak and grows in two dimensions and a domain structure is formed. Resistivity measurements reveal that resistivity of ITO on glass is minimum due to higher concentration of carriers. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2324 / 2327
页数：4
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