Nanomechanoelectronic signal transduction scheme with metal-oxide-semiconductor field-effect transistor-embedded microcantilevers

被引:17
作者
Tark, Soo-Hyun [1 ]
Srivastava, Arvind [1 ]
Chou, Stanley [1 ]
Shekhawat, Gajendra [2 ,3 ]
Dravid, Vinayak P. [1 ,2 ,3 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Int Inst Nanotechnol, Evanston, IL 60208 USA
[3] Northwestern Univ, NUANCE Ctr, Evanston, IL 60208 USA
关键词
biosensors; cantilevers; chemical sensors; intelligent sensors; microactuators; microsensors; MOSFET; nanosensors; STRESS SENSORS; MOS DEVICES; 100; SILICON; CANTILEVER;
D O I
10.1063/1.3093874
中图分类号
O59 [应用物理学];
学科分类号
摘要
We explore various metal-oxide-semiconductor field-effect transistor (MOSFET)-embedded microcantilever designs to assess their performance as an efficient nanomechanoelectronic signal transduction platform for monitoring deflection in microcantilever-based phenomena such as biochemical sensing and actuation. The current-voltage characteristics of embedded MOSFETs show current noise in the nanoampere range with a large signal-to-noise ratio sufficient to provide measureable output signal. The change in drain current with cantilever deflection is consistent with the effect of stress on carrier mobility and drain current reported in previous studies, validating that the MOSFET cantilevers can directly transduce deflection of a microcantilever into reproducible change in electrical signal.
引用
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页数:3
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