Reduction of light induced degradation by P-type c-Si wafer quality control in industrial PERC production

被引：0

作者：

Yoo, Chang Youn ^{[1
]}

Lim, Jong Youb ^{[1
]}

Kim, Jisun ^{[1
]}

Hong, Keunkee ^{[1
]}

Lee, Eunjoo ^{[1
]}

Kim, Dong Seop ^{[1
]}

机构：

[1] Shinsung E&G Co Ltd, Tech Res Ctr, Seongnam Si 13543, Gyeonggi Do, South Korea

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

LID; Oxygen concentration; PERC; Quality control; Resistivity; ARGON GAS-FLOW; OXYGEN CONCENTRATION;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The impact of light induced degradation (LID) and wafer carrier lifetime have been measured on the basis of interstitial oxygen (Oi) concentration. The oxygen concentration in ingot is controlled by Argon flow rate, and the optimum carrier lifetime at low oxygen is investigated. These wafers are then processed in PERC mass production lines yielding average cell efficiency above 21.7%. The LID loss of 1% has been achieved after 40 hours with improved wafer quality having uniform base resistivity of 1 Omega.cm and oxygen concentration below 16ppma(new ASTM, F121-83). Monitoring oxygen contents after annealing process from ingot growing to cell fabrication is the key aspect of quality control.

引用

页码：0374 / 0376

页数：3

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