Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence

被引：54

作者：

Pauc, N. ^{[1
]}

Phillips, M. R. ^{[1
]}

Aimez, V. ^{[1
]}

Drouin, D. ^{[1
]}

机构：

[1] Univ Sherbrooke, Dept Genie Elect & Genie Informat, Sherbrooke, PQ J1K 2R1, Canada

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2357881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across individual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5 K, an exciton diffusion length of 62 +/- 28 nm was found for GaN:Si (similar to 3x10(18) cm(-3)) compared with 81 +/- 20 nm for a nominally undoped n-type GaN (similar to 1x10(16) cm(-3)). (c) 2006 American Institute of Physics.

引用

页数：3

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