Ultrafast carrier dynamics on the Si(100)2x1 surface

被引:28
|
作者
Jeong, S
Zacharias, H
Bokor, J
机构
[1] UNIV ESSEN GESAMTHSCH,FACHBEREICH PHYS,D-45117 ESSEN,GERMANY
[2] UNIV CALIF BERKELEY,DEPT EECS,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 24期
关键词
D O I
10.1103/PhysRevB.54.R17300
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a study of ultrafast carrier dynamics on the clean Si(100)2X1 surface using time-resolved photoemission spectroscopy. A rapid thermalization inside the surface band is observed, and the carrier relaxation occurs on a time scale of a few hundred femtoseconds to a few picoseconds depending on the initial state energy. The relaxation time increases as the initial state energy decreases with respect to the band minimum.
引用
收藏
页码:17300 / 17303
页数:4
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