Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces

被引：12
|
作者：
Dong, Hong [1 ]
Cabrera, Wilfredo [1 ]
Qin, Xiaoye [1 ]
Brennan, Barry [1 ]
Zhernokletov, Dmitry [2 ]
Hinkle, Christopher L. [1 ]
Kim, Jiyoung [1 ]
Chabal, Yves J. [1 ]
Wallace, Robert M. [1 ,2 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
来源：
ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 10期
关键词：
silicon interfacial passivation layer; indium phosphide; high-k; diffusion; atomic layer deposition; CHEMICAL-VAPOR-DEPOSITION; AL2O3; THIN-FILMS; IN-SITU; THERMAL-STABILITY; INP(100) SURFACES; ENERGY; MECHANISMS; SILICATES; HAFNIUM; GROWTH;
D O I：
10.1021/am500752u
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 degrees C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.
引用
收藏
页码：7340 / 7345
页数：6
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