Field Emission with Ultra low Turn On Voltage from Metal Decorated Carbon Nanotubes

被引:88
作者
Sridhar, Srividya [1 ]
Tiwary, Chandrasekhar [2 ,6 ]
Vinod, Soumya [2 ]
Taha-Tijerina, Jose Jaime [2 ]
Sridhar, Srividvatha [3 ]
Kalaga, Kaushik [2 ]
Sirota, Benjamin [5 ]
Hart, Amelia H. C. [2 ]
Ozden, Sehmus [2 ]
Sinha, Ravindra Kumar [1 ]
Harsh [4 ]
Vajtai, Robert [2 ]
Choi, Wongbong [5 ]
Kordas, Krisztian [7 ]
Ajayan, Pulickel M. [2 ]
机构
[1] Delhi Technol Univ, Dept Appl Phys, Delhi 110042, India
[2] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
[3] Rice Univ, Dept Chem & Biomol Engn, Houston, TX 77005 USA
[4] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
[5] Univ N Texas, Dept Mat Sci & Engn, Denton, TX 76203 USA
[6] Indian Inst Sci, Bangalore 560012, Karnataka, India
[7] Univ Oulu, Dept Elect Engn, Microelect & Mat Phys Labs, FI-90014 Oulu, Finland
关键词
field emission; metal decoration; screening effect; work function; edge effect; RAMAN-SPECTROSCOPY; ELECTRON-EMISSION; HYDROGEN STORAGE; NANOPARTICLES; COPPER; NANOCRYSTALS; PERFORMANCE; PLATINUM; GRAPHENE; ARRAYS;
D O I
10.1021/nn500921s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A simple and scalable method of decorating 3D-carbon nanotube (CNT) forest with metal particles has been developed. The results observed in aluminum (AI) decorated CNTs and copper (Cu) decorated CNTs on silicon (Si) and Inconel are compared with undecorated samples. A significant improvement in the field emission characteristics of the cold cathode was observed with ultralow turn on voltage (E-to similar to 0.1 V/mu m) due to decoration of CNTs with metal nanoparticles. Contact resistance between the CNTs and the substrate has also been reduced to a large extent, allowing us to get stable emission for longer duration without any current degradation, thereby providing a possibility of their use in vacuum microelectronic devices.
引用
收藏
页码:7763 / 7770
页数:8
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