Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

被引：16

作者：

Gao, Xu ^{[1
]}

Aikawa, Shinya ^{[1
]}

Mitoma, Nobuhiko ^{[1
]}

Lin, Meng-Fang ^{[1
]}

Kizu, Takio ^{[1
]}

Nabatame, Toshihide ^{[2
,3
]}

Tsukagoshi, Kazuhito ^{[1
]}

机构：

[1] NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, MANA Foundry, Tsukuba, Ibaraki 3050044, Japan

[3] NIMS, MANA Adv Device Mat Grp, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 02期

关键词：

GA-ZN-O; SOURCE/DRAIN ELECTRODE; SEMICONDUCTOR; RESISTANCE;

D O I：

10.1063/1.4890312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of similar to 4 nm CuOx related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuOx interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors. (C) 2014 AIP Publishing LLC.

引用

页数：5

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