The role of etched silicon channels on the pore ordering of mesoporous silica: The importance of film thickness on providing highly orientated and defect-free thin films

被引:3
作者
Arnold, Donna C. [1 ,2 ,3 ]
O'Callaghan, John M. [1 ,2 ,3 ]
Sexton, Aoife [1 ,2 ,3 ]
Tobin, Joseph M. [1 ,2 ,3 ]
Amenitsch, Heinz [4 ]
Holmes, Justin D. [1 ,2 ,3 ]
Morris, Michael A. [1 ,2 ,3 ]
机构
[1] Univ Coll Cork, Mat & Supercrit Fluids Grp, Dept Chem, Cork, Ireland
[2] Univ Coll Cork, Mat & Supercrit Fluids Grp, Tyndall Natl Inst, Cork, Ireland
[3] Univ Dublin Trinity Coll, CRANN, Dublin 2, Ireland
[4] Austrian Acad Sci, Inst Biophys & Xray Struct Res, A-8010 Graz, Austria
基金
爱尔兰科学基金会;
关键词
Mesoporous silica; Thin films; Confining architectures; SAXS; XRR; X-RAY-SCATTERING; MESOCHANNELS; TEMPLATES; ALIGNMENT; MECHANISM; GROWTH;
D O I
10.1016/j.apsusc.2009.07.031
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
If mesoporous thin films (MTFs) are to be utilised in device applications it is important that we produce films which not only possess a single pore direction across large substrate areas ( in the range of microns) but are also relatively defect free. In this paper we report the use of con. ning architectures in the form of topographically patterned rectangular section channels etched into native silicon substrates to promote ordering of the mesopores. We discuss the effects of the channels on films with different thicknesses. The film thickness is shown to be a critical parameter in de. ning highly orientated and defect-free films and the data demonstrate that it is possible to achieve a single mesoporous silica domain across macroscopic dimensions with thin film thicknesses of approximately 200 nm but that critically pore order can be lost in ultra thin and thicker films produced by these methods. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码:9333 / 9342
页数:10
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