Contact hole application for lithography process development using the Opti-Probe® 3-dimensional RT/CD® technology

被引：1

作者：

Jiang, Z ^{[1
]}

Sorkhabi, O ^{[1
]}

Chu, H ^{[1
]}

Cao, X ^{[1
]}

Li, G ^{[1
]}

Wen, Y ^{[1
]}

Opsal, J ^{[1
]}

Chang, YC ^{[1
]}

机构：

[1] Therma Wave Inc, Fremont, CA 94539 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2 | 2004年 / 5375卷

关键词：

metrology; spectroscopic ellipsometry; scatterometry; critical dimension; contact hole;

D O I：

10.1117/12.556587

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents measurement results of 3-D contact hole profiles using RT/CD(R) technology for various diameter-to-space (D/S) ratios and film stacks. The key controlling parameters (hole depth, diameter, sidewall angle, and hole openness, etc.) for lithography processing of contacts and vias were studied in terms of measurement sensitivity on samples with different pitches and D/S ratios and film stacks. Good correlation (R(2)similar to0.99) between CD-SEM and RT/CD(R) was obtained for the sample structures. The static and dynamic measurement stability of contact diameter and contact depth was better than I nm using simple profile modeling.

引用

页码：1364 / 1373

页数：10

共 6 条

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