Annealing effects on the microstructure and magnetic properties of Y3Fe5O12 films deposited on Si/SiO2 substrates by RF magnetron sputtering

被引：15

作者：

Lian, Jianyun ^{[1
,2
]}

Chen, Ying ^{[1
]}

Liu, Zhen ^{[1
]}

Zhu, Mingkang ^{[1
]}

Wang, Genshui ^{[1
]}

Zhang, Wenbin ^{[1
]}

Dong, Xianlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2017年 / 43卷 / 10期

基金：

中国国家自然科学基金;

关键词：

YIG film; Crack-free; Annealing Ferromagnetic resonance linewidth; YIG THIN-FILMS; IRON-GARNET FILMS; COOLING RATE; YTTRIUM; TEMPERATURE; GROWTH;

D O I：

10.1016/j.ceramint.2017.03.023

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crack-free Yttrium iron garnet (Y3Fe5O12, YIG) thin films were successfully deposited on Si/SiO2 substrates by RF magnetron sputtering, through controlling the annealing temperature and cooling rate during post-annealing process. The annealing condition dependences of crystallinity, microstructures and magnetic properties of YIG films were investigated. With the increase of the annealing temperature, the saturation magnetization of YIG films increases and the coercive field decreases, while the ferromagnetic resonance (FMR) linewidth becomes wider. The films annealed at 750 degrees C with cooling rate of 1 degrees C/min are crack-free and present excellent comprehensive performances, the corresponding coercive field is 32 Oe and the FMR linewidth is 57 Oe at 9.4 GHz. These results indicate that high-quality crack-free YIG films with excellent magnetic properties can be achieved on Si/SiO2 substrates by controlling the annealing process, which makes it more convenient to fabricate low-loss microwave integrated devices.

引用

页码：7477 / 7481

页数：5

共 28 条

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