Temperature distribution in VDMOS power transistor cells

被引：0
|
作者：
Pavlovic, Z
Manic, I
Prijic, Z
机构：
来源：
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper covers a numerical analysis of a self-heating effect and the effect of mutual heating of nearest neighbouring VDMOS power transistor cells. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS power transistor was calculated on the basis of proposed mathematical model.
引用
收藏
页码：403 / 406
页数：4
相关论文
共 50 条
  • [41] ANALYSIS OF THERMAL-CHARACTERISTICS OF VDMOS POWER TRANSISTORS
    LI, ZJ
    CHEN, XB
    YU, HQ
    SOLID-STATE ELECTRONICS, 1991, 34 (03) : 225 - 231
  • [42] One-dimensional analytical modeling of the VDMOS transistor taking into account the thermoelectrical interactions
    Lallement, C
    Bouchakour, R
    Maurel, T
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 1997, 44 (02) : 103 - 111
  • [43] ONE-DIMENSIONAL ANALYTICAL MODELING OF THE VDMOS TRANSISTOR TAKING INTO ACCOUNT THE THERMOELECTRICAL INTERACTIONS
    LALLEMENT, C
    BOUCHAKOUR, R
    MAUREL, T
    ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1994, 49 (9-10): : 543 - 553
  • [44] Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
    Long, Hongyao
    Sweet, Mark R.
    Ngwendson, Luther-King
    Narayanan, E. M. Sankara
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [45] TEMPERATURE DISTRIBUTION AND POWER DISSIPATION IN MOSFETS
    SCHUTZ, A
    SELBERHERR, S
    POTZL, HW
    SOLID-STATE ELECTRONICS, 1984, 27 (04) : 394 - 395
  • [46] OPTIMIZATION OF VDMOS POWER TRANSISTORS FOR MINIMUM ON-STATE RESISTANCE
    DAVIES, JT
    WALKER, P
    NUTTALL, KI
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1987, 134 (03): : 87 - 91
  • [47] Determination of AlGaN/GaN power transistor junction temperature for radar applications
    Brocero, Guillaume
    Sipma, Jean-Pierre
    Eudeline, Philippe
    Brocero, Guillaume
    Guhel, Yannick
    Boudart, Bertrand
    2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
  • [48] Physics Understanding of High Temperature Behavior of Gallium Nitride Power Transistor
    Wang, Sizhen
    Xue, Fei
    Huang, Alex Q.
    Liu, Siyang
    2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, : 324 - 327
  • [49] BEHAVIOR OF GERMANIUM JUNCTION TRANSISTORS AT ELEVATED TEMPERATURE AND POWER TRANSISTOR DESIGN
    ARMSTRONG, LD
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (03): : 412 - 412
  • [50] Comparison Study of LDMOS and VDMOS Technologies for RF Power Amplifiers
    Ramarao, B. V.
    Mishra, J. K.
    Pande, Manjiri
    Singh, P.
    Kumar, G.
    Mukherjee, J.
    SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 492 - 493
12345