Temperature distribution in VDMOS power transistor cells

被引：0
|
作者：
Pavlovic, Z
Manic, I
Prijic, Z
机构：
来源：
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper covers a numerical analysis of a self-heating effect and the effect of mutual heating of nearest neighbouring VDMOS power transistor cells. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS power transistor was calculated on the basis of proposed mathematical model.
引用
收藏
页码：403 / 406
页数：4
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