Temperature distribution in VDMOS power transistor cells

被引：0
|
作者：
Pavlovic, Z
Manic, I
Prijic, Z
机构：
来源：
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2 | 1997年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper covers a numerical analysis of a self-heating effect and the effect of mutual heating of nearest neighbouring VDMOS power transistor cells. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS power transistor was calculated on the basis of proposed mathematical model.
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收藏
页码：403 / 406
页数：4
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