Dislocation scattering of electrons in plastically deformed germanium

被引：1
作者：
Alkan, B
Serin, T
Unal, B
机构：
[1] Department of Engineering Physics, Faculty of Sciences, University of Ankara, 06100 Tandogan, Ankara
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 07期
关键词：
D O I：
10.1088/0268-1242/11/7/013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using the correlation function variant of linear response theory, we calculated the electron mobility mu(D) due to charged dislocation lines in Ge as a function of temperature T.
引用
收藏
页码：1046 / 1050
页数：5
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