Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions

被引:10
|
作者
Watanabe, Masahiro [1 ]
Nakajima, Keisuke [1 ]
Kaga, Mitsuru [1 ]
Kuwano, Yuka [1 ]
Minamikawa, Daichi [1 ]
Suzuki, Tomoyuki [1 ]
Yamashita, Kouji [1 ]
Iwaya, Motoaki [1 ]
Takeuchi, Tetsuya [1 ]
Kamiyama, Satoshi [1 ]
Akasaki, Isamu [1 ,2 ]
机构
[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[2] Nagoya Univ, Akasaki Res Ctr, Grad Sch Engn, Nagoya, Aichi 4688502, Japan
关键词
MG; ENERGY;
D O I
10.7567/JJAP.53.05FL06
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated nitride-based micro-LED arrays with a small number of fabrication process steps by using a combination of tunnel junctions and patterned n-GaN cathode lines. A use of the combination enables us to skip a couple of process steps required in standard LED array fabrication. A 10 x 10 channel matrix-addressable LED array with a 10 x 16 mu m(2) emission regions and a 25 mu m pitch lengths showed uniform operating voltages and light output intensities, indicating good yield due to the small number of process steps used. In addition, microdisplay of over 1000 (14 x 72) channels was successfully demonstrated. The new array structure with the tunnel junction and n-GaN cathode line provides a high density and a high yield simultaneously. (C) 2014 The Japan Society of Applied Physics
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页数:4
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