Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions

被引：10

作者：

Watanabe, Masahiro ^{[1
]}

Nakajima, Keisuke ^{[1
]}

Kaga, Mitsuru ^{[1
]}

Kuwano, Yuka ^{[1
]}

Minamikawa, Daichi ^{[1
]}

Suzuki, Tomoyuki ^{[1
]}

Yamashita, Kouji ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Grad Sch Engn, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 05期

关键词：

MG; ENERGY;

D O I：

10.7567/JJAP.53.05FL06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated nitride-based micro-LED arrays with a small number of fabrication process steps by using a combination of tunnel junctions and patterned n-GaN cathode lines. A use of the combination enables us to skip a couple of process steps required in standard LED array fabrication. A 10 x 10 channel matrix-addressable LED array with a 10 x 16 mu m(2) emission regions and a 25 mu m pitch lengths showed uniform operating voltages and light output intensities, indicating good yield due to the small number of process steps used. In addition, microdisplay of over 1000 (14 x 72) channels was successfully demonstrated. The new array structure with the tunnel junction and n-GaN cathode line provides a high density and a high yield simultaneously. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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