Band gap engineering and stimulated emission of ZnMgO nanowires

被引：103
作者：
Hsu, Hsu-Cheng
Wu, Chun-Yi
Cheng, Hsin-Ming
Hsieh, Wen-Feng [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Ind Technol Res Inst, Matl & Chem Res Labs, Hsinchu 310, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期
关键词：
D O I：
10.1063/1.2218813
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a simple method for fabricating heterostructured ZnMgO nanowires by annealing the preformed ZnO/MgO core-shell structure. Photoluminescence from the alloy nanowires shows strong near-band-edge (NBE) emission, reflecting good material quality. A blueshift of the NBE emission at room temperature after the annealing treatment is attributed to the diffusion of Mg from the shell into the core ZnO of the nanowires to form a ternary ZnMgO alloy. Band gap engineering and stimulated emissions of ZnMgO nanowires with different Mg doping concentrations are also demonstrated. (c) 2006 American Institute of Physics.
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页数：3
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