Structural and optical properties of Cd2GeSe4 thin films grown by thermal evaporation

被引:0
|
作者
Park, YS [1 ]
Kim, KH
Lee, JJ
Kang, TW
机构
[1] Gyeongsang Natl Univ, Dept Phys, Jinju 660701, South Korea
[2] Gyeongsang Natl Univ, Res Inst Nat Sci, Jinju 660701, South Korea
[3] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
关键词
Cd2GeSe4; photoinduced discharge characteristics;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Cd2GeSe4 films were grown by using conventional thermal vacuum evaporation. X-ray diffraction spectra showed that the Cd2GeSe4 thin films had a strong (113) preferred orientation. The crystal structure was hexagonal with lattice constants a = 7.405 Angstrom and c = 36.24 Angstrom. The optical energy band gap for Cd2GeSe4 film measured at room temperature was about 1.65 eV. The charged carrier dynamical behavior of Cd2GeSe4 film was investigated using the photoinduced discharge characteristics (PIDC). The calculated values of the electron mobility and carrier concentration were 17.3 cm(2)/Vs and 2 x 10(23)/cm(3), respectively.
引用
收藏
页码:875 / 878
页数:4
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