Nip the bubble in the bud: a guide to avoid gas nucleation in microfluidics

被引:104
作者
Pereiro, Iago [1 ]
Khartchenko, Anna Fomitcheva [1 ]
Petrini, Lorenzo [1 ]
Kaigala, Govind, V [1 ]
机构
[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
基金
欧洲研究理事会;
关键词
SURFACE NANOBUBBLES; CAVITATION BUBBLE; WATER; STABILITY; OXYGEN; GROWTH; TRAP; PDMS; FLOW; WETTABILITY;
D O I
10.1039/c9lc00211a
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
Gas bubbles are almost a routine occurrence encountered by researchers working in the field of microfluidics. The spontaneous and unexpected nature of gas bubbles represents a major challenge for experimentalists and a stumbling block for the translation of microfluidic concepts to commercial products. This is a startling example of successful scientific results in the field overshadowing the practical hurdles of day-to-day usage. We however believe such hurdles can be overcome with a sound understanding of the underlying conditions that lead to bubble formation. In this tutorial, we focus on the two main conditions that result in bubble nucleation: surface nuclei and gas supersaturation in liquids. Key theoretical concepts such as Henry's law, Laplace pressure, the role of surface properties, nanobubbles and surfactants are presented along with a view of practical implementations that serve as preventive and curative measures. These considerations include not only microfluidic chip design and bubble traps but also often-overlooked conditions that regulate bubble formation, such as gas saturation under pressure or temperature gradients. Scenarios involving electrolysis, laser and acoustic cavitation or T-junction/co-flow geometries are also explored to provide the reader with a broader understanding on the topic. Interestingly, despite their often-disruptive nature, gas bubbles have also been cleverly utilized for certain practical applications, which we briefly review. We hope this tutorial will provide a reference guide in helping to deal with a familiar foe, the "bubble".
引用
收藏
页码:2296 / 2314
页数:19
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