Molecular dynamics simulations of shock-compressed single-crystal silicon

被引:47
作者
Mogni, Gabriele [1 ]
Higginbotham, Andrew [1 ]
Gaal-Nagy, Katalin [2 ]
Park, Nigel [3 ]
Wark, Justin S. [1 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
[3] AWE, Reading RG7 4PR, Berks, England
基金
英国工程与自然科学研究理事会;
关键词
X-RAY-DIFFRACTION; PHASE-TRANSITION STRESSES; AXIAL YIELD STRENGTHS; HIGH-PRESSURE; ATOMISTIC SIMULATION; WAVE; STRAIN; DEFORMATION; DEPENDENCE; SI;
D O I
10.1103/PhysRevB.89.064104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present molecular dynamics simulations using a Tersoff-like potential of single crystals of silicon shock compressed along the < 001 > direction. We find an elastic response up to a critical stress, above which the shear stress is relieved by an inelastic response associated with a partial transformation to a new high-pressure phase, where both the new phase (Imma) and the original cubic diamond phase are under close to hydrostatic conditions. We study how the fraction of the two phases is related to both their geometry and their enthalpy, and discuss the relevance of the results to previous experimental measurements of the response of silicon to shock compression. We note that the simulations are consistent with shear stress relief provided directly by the shock-induced phase transition itself, without an intermediate state of plastic deformation of the cubic diamond phase, but that the onset of inelastic behavior within the simulations still occurs at considerably higher stresses than found in experiments.
引用
收藏
页数:10
相关论文
共 68 条
[1]   Computer simulation of point defect properties in dilute Fe-Cu alloy using a many-body interatomic potential [J].
Ackland, GJ ;
Bacon, DJ ;
Calder, AF ;
Harry, T .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1997, 75 (03) :713-732
[2]   High-pressure phases of group IV and III-V semiconductors [J].
Auckland, GJ .
REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (04) :483-516
[3]   COMPARATIVE-STUDY OF SILICON EMPIRICAL INTERATOMIC POTENTIALS [J].
BALAMANE, H ;
HALICIOGLU, T ;
TILLER, WA .
PHYSICAL REVIEW B, 1992, 46 (04) :2250-2279
[4]   EXPLOSIVE PHASE-TRANSITIONS [J].
BARTON, AFM ;
HODDER, APW .
CHEMICAL REVIEWS, 1973, 73 (02) :127-139
[5]   Atomistic simulation of shock wave-induced melting in argon [J].
Belonoshko, AB .
SCIENCE, 1997, 275 (5302) :955-957
[6]   Atomistic shock Hugoniot simulation of single-crystal copper [J].
Bringa, EM ;
Cazamias, JU ;
Erhart, P ;
Stölken, J ;
Tanushev, N ;
Wirth, BD ;
Rudd, RE ;
Caturla, MJ .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) :3793-3799
[7]   Shock deformation of face-centred-cubic metals on subnanosecond timescales [J].
Bringa, M. ;
Rosolankova, K. ;
Rudd, R. E. ;
Remington, B. A. ;
Wark, J. S. ;
Duchaineau, M. ;
Kalantar, H. ;
Hawreliak, J. ;
Belak, J. .
NATURE MATERIALS, 2006, 5 (10) :805-809
[8]   ELECTRICAL MEASUREMENTS IN SILICON UNDER SHOCK-WAVE COMPRESSION [J].
COLEBURN, NL ;
FORBES, JW ;
JONES, HD .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5007-5012
[9]   COMPARISON OF SEMIEMPIRICAL POTENTIAL FUNCTIONS FOR SILICON AND GERMANIUM [J].
COOK, SJ ;
CLANCY, P .
PHYSICAL REVIEW B, 1993, 47 (13) :7686-7699
[10]   PHASE-TRANSITIONS UNDER SHOCK-WAVE LOADING [J].
DUVAL, GE ;
GRAHAM, RA .
REVIEWS OF MODERN PHYSICS, 1977, 49 (03) :523-579