Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios

被引：5

作者：

Seki, N ^{[1
]}

Takakura, K ^{[1
]}

Suemasu, T ^{[1
]}

Hasegawa, F ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 5-6期

关键词：

iron disilicide; conductivity; Si/Fe ratio; RBS;

D O I：

10.1016/j.mssp.2003.07.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[1 0 0]-oriented beta-FeSi2 films were grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE) with a deposited Si to Fe atomic ratio (Si/Fe ratio) varied from 1.6 to 2.8. It was found that the conduction type of the beta-FeSi2 films changed from p- to n-type between the deposited Si/Fe = 2.4 and 2.8. Rutherford Back scattering (RBS) measurements revealed that the real Si/Fe ratio of beta-FeSi2 is 2.0-2.1 for all the samples after 900degreesC annealing for 14 h, showing that stoichiometry of the grown films is almost satisfied even though the deposited Si/Fe ratio was away from stoichiometry. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：307 / 309

页数：3

共 17 条

[1] Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVD [J].

Akiyama, K ;

Ohya, S ;

Konuma, S ;

Numata, K ;

Funakubo, H .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 III) :1951-1955

[2] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703

[3] Room-temperature 1.56 μm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition [J].

Chu, S ;

Hirohada, T ;

Nakajima, K ;

Kan, H ;

Hiruma, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (11A) :L1200-L1202

[4] Direct growth of [100]-oriented high-quality β-FeSi2 films on Si(001) substrates by molecular beam epitaxy [J].

Hiroi, N ;

Suemasu, T ;

Takakura, K ;

Seki, N ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10A) :L1008-L1011

[5]

HONIG RE, 1962, RCA REV, V23, P567

[6] A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 mu m [J].

Leong, D ;

Harry, M ;

Reeson, KJ ;

Homewood, KP .

NATURE, 1997, 387 (6634) :686-688

[7] Electroluminescence of β-FeSi2 light emitting devices [J].

Lourenço, MA ;

Butler, TM ;

Kewell, AK ;

Gwilliam, RM ;

Kirkby, KJ ;

Homewood, KP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (6A) :4041-4044

[8] POINT-DEFECTS AND THERMOELECTRIC PROPERTIES OF IRON DISILICIDE CERAMICS SINTERED WITH SIH4-PLASMA-PROCESSED MICROGRAINS [J].

MIKI, T ;

MATSUI, Y ;

TERAOKA, Y ;

EBINA, Y ;

MATSUBARA, K ;

KISHIMOTO, K .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2097-2103

[9] Characterization of the stoichiometry of coevaporated FeSix films by AES, EDX, RES, and electron microscopy [J].

Schopke, A ;

Selle, B ;

Sieber, I ;

Reinsperger, GU ;

Stauss, P ;

Herz, K ;

Powalla, M .

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1997, 358 (1-2) :322-325

[10] Room temperature 1.6 μm electroluminescence from a Si-based light emitting diode with β-FeSi2 active region [J].

Suemasu, T ;

Negishi, Y ;

Takakura, K ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10B) :L1013-L1015

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