Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Spin orbit torque-driven magnetization switching in perpendicularly magnetized thin film relies on an extra in-plane magnetic field to break the in-plane magnetic symmetry, which is an obstacle for the integration of spin-orbit torque-based spintronic devices. Here, we propose a simple method to realize the field-free spin-orbit torque-driven magnetization switching by exploiting a tilted magnetic anisotropy, which is caused by the direct coupling of two ferromagnetic layers in the Pt/Co/FeNi/Ta structure. When preparing the sample, a 1000Oe in-plane magnetic field was applied to ensure the magnetic moment deviating a small angle from the out-of-plane direction to this in-plane field direction. We experimentally demonstrate the deterministic field-free magnetization switching in Pt/Co/FeNi/Ta by the field-like spin-orbit torques when the electric current is applied perpendicular to this in-plane field direction. The switching performance is slightly degraded with the critical switching current density and thermal stability factor, respectively, reaching 6.4x10(6) A/cm(2) and 25 due to the slightly decreased spin-orbit torque efficiency and perpendicular magnetic anisotropy with introducing the FeNi layers. Our work paves the way for realizing the field-free magnetization switching by spin-orbit torques.