Bioorganic nanodots for non-volatile memory devices

被引:12
|
作者
Amdursky, Nadav [1 ]
Shalev, Gil [1 ]
Handelman, Amir [1 ]
Litsyn, Simon [1 ,2 ]
Natan, Amir [1 ]
Roizin, Yakov [1 ,3 ]
Rosenwaks, Yossi [1 ]
Szwarcman, Daniel [1 ,2 ]
Rosenman, Gil [1 ,2 ]
机构
[1] Tel Aviv Univ, Iby & Aladar Fleischman Fac Engn, Sch Elect Engn, IL-69978 Tel Aviv, Israel
[2] StoreDot LTD, Ramat Gan, Israel
[3] TowerJazz, IL-23105 Migdal Haemeq, Israel
来源
APL MATERIALS | 2013年 / 1卷 / 06期
基金
俄罗斯基础研究基金会;
关键词
PEPTIDE NANOTUBES; SILICON; NANOCRYSTALS; FABRICATION; OXIDE; TRAP;
D O I
10.1063/1.4838815
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of similar to 2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] Low temperature rectifying junctions for crossbar non-volatile memory devices
    Tallarida, G.
    Huby, N.
    Kutrzeba-Kotowska, B.
    Spiga, S.
    Arcari, M.
    Csaba, G.
    Lugli, P.
    Redaelli, A.
    Bez, R.
    2009 IEEE INTERNATIONAL MEMORY WORKSHOP, 2009, : 6 - +
  • [32] Volatile and Non-Volatile Single Electron Memory
    Touati, A.
    Kalboussi, A.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2013, 5 (03)
  • [33] Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices
    Lei, Bao
    Kwan, Wei Lek
    Shao, Yue
    Yang, Yang
    ORGANIC ELECTRONICS, 2009, 10 (06) : 1048 - 1053
  • [34] Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices
    Lee, Seung-Hyun
    Park, Sechang
    Choi, Ju-Young
    Choi, Yun-Je
    Ji, Hyung Woo
    Joung, Hyeyoung
    Kim, Dam-Bi
    Yoon, Kang-Hoon
    Ji, Gyumin
    Choi, Daeho
    Lee, Jaekang
    Paeng, Ki-Jung
    Yang, Jaesung
    Cho, Soohaeng
    Chung, Chan-Moon
    MATERIALS ADVANCES, 2023, 4 (22): : 5706 - 5715
  • [35] Ferroelectric non-volatile logic devices
    Takasu, H
    Fujimori, Y
    Nakamura, T
    Kimura, H
    Hanyu, T
    Kameyama, M
    INTEGRATED FERROELECTRICS, 2004, 61 : 83 - 88
  • [36] Ferroelectric non-volatile logic devices
    Fujimori, Y
    Nakamura, T
    Takasu, H
    Kimura, H
    Hanyu, T
    Kameyama, M
    INTEGRATED FERROELECTRICS, 2003, 56 : 1003 - 1012
  • [37] SECONDARY ION MASS-SPECTRA OF NON-VOLATILE BIOORGANIC COMPOUNDS
    KAMBARA, H
    HISHIDA, S
    ANALYTICAL CHEMISTRY, 1981, 53 (14) : 2340 - 2344
  • [38] Non-Volatile memory (NVM) technologies
    Shao, Zili
    Chang, Yuan-Hao
    JOURNAL OF SYSTEMS ARCHITECTURE, 2016, 71 : 1 - 1
  • [39] Non-volatile memory based on nanostructures
    Kalinin, Sergei
    Yang, J. Joshua
    Demming, Anna
    NANOTECHNOLOGY, 2011, 22 (25)
  • [40] Advances in non-volatile memory technology
    Wong, Hei
    MICROELECTRONICS RELIABILITY, 2012, 52 (04) : 611 - 612