Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation

被引：15
作者：
Zinovyev, V. A.
Vastola, G.
Montalenti, F.
Miglio, Leo
机构：
[1] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
来源：
SURFACE SCIENCE | 2006年 / 600卷 / 20期
关键词：
epitaxy; self-assembly; strain; germanium; silicon; molecular dynamics; Green's function methods; SHAPE TRANSITION; CRYSTAL-SURFACES; GE ISLANDS; GROWTH; NANOSTRUCTURES; SYSTEMS; PYRAMIDS; DOMES;
D O I：
10.1016/j.susc.2006.07.047
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We propose an extension of the well-known flat-island approximation in (1 + 1) dimensions which, while keeping simple analytical relations, allows one to better describe the strain field on the facets of steeper islands, and on the wetting layer between them. The results of atomistic molecular dynamics simulations using the Tersoff potential are used as a benchmark. The simple continuum approach is also shown to predict the correct trend of the strain gradients characterizing closely-spaced interacting islands, which has been recently observed to produce lateral motion of large Ge dots on Si(001). (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4777 / 4784
页数：8
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