Calculation of electronic and optical properties of 1550 nm VCSEL based on Group IV elements

被引：1

作者：

Li, Hongqiang ^{[1
]}

Zhang, Sai ^{[1
]}

Zhang, Yikai ^{[1
]}

Ding, Mingjun ^{[1
]}

Lu, Xinyan ^{[1
,2
]}

Prades, Joan Daniel ^{[3
,4
]}

机构：

[1] Tiangong Univ, Sch Elect & Informat Engn, Tianjin Key Lab Optoelect Detect Technol & Syst, Tianjin 300387, Peoples R China

[2] Tiangong Univ, Sch Mech Engn, Dept Mech Engn, Tianjin 300387, Peoples R China

[3] Univ Barcelona UB, Dept Elect & Biomed Engn, MIND, E-08028 Barcelona, Spain

[4] Univ Barcelona UB, Inst Nanosci & Nanotechnol IN 2UB, E-08028 Barcelona, Spain

来源：

LASER PHYSICS | 2021年 / 31卷 / 02期

基金：

中国国家自然科学基金;

关键词：

vertical cavity surface emitting lasers; distributed Bragg reflector; quantum well; SiGe;

D O I：

10.1088/1555-6611/abd8cc

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Si/SiGe quantum well (QW) structures show considerable potential in revolutionising Si photonics. This study proposes a novel 1550 nm vertical cavity surface-emitting laser (VCSEL) that is based on Group IV elements and composed of Si/SiO2 distributed Bragg reflectors and Si/Si0.13Ge0.87 QWs. Material composition and QW width in the active region are optimised. The proposed Group IV-based VCSEL can exhibit epitaxial growth on a vertical binary blazed grating coupler and increase coupling efficiency relative to the traditional Group III-V-based VCSEL with an Si waveguide. The proposed VCSEL on Si based on the Group IV element scheme is a cheap, high-yielding and temperature-insensitive on-chip light source that can be used in large-scale, high-density monolithic integration.

引用

页数：6