Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays

被引：27

作者：

Patella, F

Arciprete, F

Placidi, E

Nufris, S

Fanfoni, M

Sgarlata, A

Schiumarini, D

Balzarotti, A

机构：

[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy

[2] Ist Nazl Fis Mat, I-00133 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期

关键词：

D O I：

10.1063/1.1508416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphology of the InAs/GaAs(001) system has been imaged by atomic force microscopy (AFM) at different stages of the epitaxial growth from the initial formation of a pseudomorphic two-dimensional (2D) interace up to the self-aggregation of InAs quantum dots (QDs). The substrate texture and the dependence of the cation diffusion on the elastic strain field fully control the lateral ordering of the nanoparticles in the self assembling process and determine the final morphology of multistacked InAs QD arrays. (C) 2002 American Institute of Physics.

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页码：2270 / 2272

页数：3

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