Lithium doping and vacancy effects on the structural, electronic and magnetic properties of hexagonal boron nitride sheet: A first-principles calculation
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作者:
Fartab, Dorsa S.
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Iran Univ Sci & Technol, Dept Phys, Mat Simulat Lab, Tehran 1684613114, IranIran Univ Sci & Technol, Dept Phys, Mat Simulat Lab, Tehran 1684613114, Iran
Fartab, Dorsa S.
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Kordbacheh, Amirhossein Ahmadkhan
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Iran Univ Sci & Technol, Dept Phys, Mat Simulat Lab, Tehran 1684613114, IranIran Univ Sci & Technol, Dept Phys, Mat Simulat Lab, Tehran 1684613114, Iran
Kordbacheh, Amirhossein Ahmadkhan
[1
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[1] Iran Univ Sci & Technol, Dept Phys, Mat Simulat Lab, Tehran 1684613114, Iran
The first-principles calculations based on spin-polarized density functional theory is carried out to investigate the structural, electronic and magnetic properties of a hexagonal boron nitride sheet (h-BNS) doped by one or two lithium atom(s). Moreover, a vacancy in the neighborhood of one Li-substituted atom is introduced into the system. All optimized structures indicate significant local deformations with Li atom(s) protruded to the exterior of the sheet. The defects considered at N site are energetically more favorable than their counterpart structures at B site. The spin-polarized impurity states appear within the bandgap region of the pristine h-BNS, which lead to a spontaneous magnetization with the largest magnetic moments of about 2 mu(B) in where a single or two B atom(s) are replaced by Li atom(s). Furthermore, the Li substitution for a single B atom increases the density of holes compared to that of electrons forming a p-type semiconductor. More interestingly, the structure in which two Li are substituted two neighboring B atoms appears to show desired half-metallic behavior that may be applicable in spintronic. The results provide a way to enhance the conductivity and magnetism of the pristine h-BNS for potential applications in BN-based nanoscale devices. (C) 2018 Published by Elsevier Ltd.
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Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics,Chinese Academy of SciencesAnhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences
倪友保
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王振友
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戚鸣
张春丽
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Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics,Chinese Academy of SciencesAnhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences
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Korea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
Kim, Do-Hyun
Kim, Donghyeok
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Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
Kim, Donghyeok
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Kim, Gyu Tae
Kim, Hong-Dae
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Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
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Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan
Nishida, Yasutaka
Yoshida, Takashi
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Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan
Yoshida, Takashi
Ifuku, Ryota
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Tokyo Electron Ltd, Yamanashi Reg Off, Proc Dev Ctr, Nirasaki, Yamanashi, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan
Ifuku, Ryota
Sakai, Tadashi
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Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan