Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures

被引:2
作者
Strel'chuk, A. M. [1 ]
Lebedev, A. A. [1 ]
Bulat, P., V [2 ]
机构
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Sevastopol State Univ, Sevastopol 299053, Russia
关键词
silicon carbide; rectifying diode; Schottky barrier; high temperature;
D O I
10.1134/S1063782620120374
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Forward and reverse current-voltage characteristics of commercial rectifier diodes based on a Schottky barrier to 4H-SiC are studied in the temperature range 20-370 degrees C at a maximum current of 10-20 mA and maximum voltage of 10-100V. It is found that the diodes can be considered nearly ideal with a Schottky-barrier height of similar to 1.5 eV, with the forward current over the entire temperature range and the reverse current at high temperatures being largely due to thermionic emission. The upper limit of the working temperature range of 4H-SiC-based Schottky rectifier diodes at the currents and voltages under study approximately corresponds to the fundamental limit determined by the barrier height. In the reported experiment it reaches 370 degrees C.
引用
收藏
页码:1624 / 1627
页数:4
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