Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

被引：8

作者：

Kumari, Preeti ^{[1
]}

Surendranathan, Umeshwarnath ^{[1
]}

Wasiolek, Maryla ^{[2
]}

Hattar, Khalid ^{[2
]}

Bhat, Narayana ^{[3
]}

Ray, Biswajit ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

[2] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[3] Univ Alabama, Ctr Space Plasma & Aeron Res, Huntsville, AL 35899 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2022年 / 69卷 / 03期

基金：

美国国家科学基金会;

关键词：

Nonvolatile memory; Sensitivity; Dosimetry; MOSFET; Logic gates; Radiation effects; Threshold voltage; 3-D NAND; ionizing radiation; multi-level-cell; read retry; GATE; ENVIRONMENTS;

D O I：

10.1109/TNS.2021.3125652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values [similar to 20 krad (Si)] from measured data at lower TID values [<1 krad (Si)]. Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin, and the intrinsic errors on the dosimeter design using detailed experimentation.

引用

页码：478 / 484

页数：7

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