Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

被引：34

作者：

Bryan, Isaac ^{[1
]}

Bryan, Zachary ^{[1
]}

Bobea, Milena ^{[1
]}

Hussey, Lindsay ^{[1
]}

Kirste, Ronny ^{[1
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 13期

基金：

美国国家科学基金会;

关键词：

PHASE EPITAXY; GROWTH; MICROSTRUCTURE;

D O I：

10.1063/1.4897233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN homoepitaxial films were grown by metalorganic chemical vapor deposition on chemomechanically polished (1 (1) over bar 00)-oriented single crystalline AlN substrates. The dependence of the surface morphology, structural quality, and unintentional impurity concentrations on the growth temperature was studied in order to determine the most appropriate growth conditions for high quality (1 (1) over bar 00) AlN epitaxial layers. Optically smooth surfaces (RMS roughness of 0.4 nm) and high crystalline quality, as demonstrated by the presence of FWHM values for (10 (1) over bar0) rocking curves along [0001] of less than 25 arc.sec, were achieved for films grown above 1350 degrees C. Furthermore, sharp and intense near band edge luminescence was observed in these high quality films. A reduction in unintentional oxygen impurity levels was seen with an increase in growth temperature. These high crystalline quality films are suitable for device applications and hold great potential for providing an ideal platform for deep UV emitters with high Al content AlGaN without polarization related effects. (C) 2014 AIP Publishing LLC.

引用

页数：5

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