Small-bandgap quinoid-based p-conjugated polymers

被引:84
作者
Mikie, Tsubasa [1 ]
Osaka, Itaru [1 ]
机构
[1] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, 1-4-1 Kagamiyama, Higashihiroshima, Hiroshima 7398527, Japan
关键词
DONOR-ACCEPTOR POLYMERS; THIN-FILM TRANSISTORS; N-TYPE; GAP POLYMERS; HIGH-MOBILITY; SOLAR-CELLS; CHARGE-TRANSPORT; BUILDING-BLOCK; PECHMANN DYE; PHOTOVOLTAIC PERFORMANCE;
D O I
10.1039/d0tc01041c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Small-bandgap pi-conjugated polymers are an important class of materials possessing significant potential for their broad application in organic electronics. Incorporating a quinoid structure into the polymer backbone is a powerful strategy for reducing the bandgap. Although this also leads to highlying HOMO energy levels, resulting in unstable polymers, the use of an electron-deficient quinoid building unit can bring about low-lying HOMO energy levels, thus stabilizing the polymer against oxidation. Recent efforts in molecular design and synthesis have produced a number of fascinating small-bandgap pi-conjugated polymers based on quinoid structures, many of which have shown notable performance in organic electronic devices such as transistors and solar cells. This review covers the progress in small-bandgap quinoid-based pi-conjugated polymers, focusing on a variety of electrondeficient quinoid building units. We highlight the properties of each quinoid building unit and the polymers along with their structural features and device performances.
引用
收藏
页码:14262 / 14288
页数:27
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