All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence

被引：20

作者：

Cadiz, F. ^{[1
]}

Barate, P. ^{[2
]}

Paget, D. ^{[1
]}

Grebenkov, D. ^{[1
]}

Korb, J. P. ^{[1
]}

Rowe, A. C. H. ^{[1
]}

Amand, T. ^{[2
]}

Arscott, S. ^{[3
]}

Peytavit, E. ^{[3
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] Univ Toulouse, INSA CNRS UPS, F-31077 Toulouse, France

[3] Univ Lille, CNRS, IEMN, F-59652 Villeneuve Dascq, France

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 02期

关键词：

SURFACE RECOMBINATION VELOCITY; MINORITY-CARRIER LIFETIME; DOPED GAAS; TEMPERATURE-DEPENDENCE; ELECTRON; RELAXATION; KINETICS; MOBILITIES; MAJORITY;

D O I：

10.1063/1.4889799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new approach is demonstrated for investigating charge and spin diffusion as well as surface and bulk recombination in unpassivated doped semiconductors. This approach consists in using two complementary, conceptually related, techniques, which are time-resolved photoluminescence (TRPL) and spatially resolved microluminescence (mu PL) and is applied here to p(+) GaAs. Analysis of the sole TRPL signal is limited by the finite risetime. On the other hand, it is shown that joint TRPL and mu PL can be used to determine the diffusion constant, the bulk recombination time, and the spin relaxation time. As an illustration, the temperature variation of these quantities is investigated for p(+) GaAs. (C) 2014 AIP Publishing LLC.

引用

页数：9

共 33 条

[1] An optical technique for measuring surface recombination velocity [J].