Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy

被引：26

作者：

Chinone, N. ^{[1
]}

Nakamura, T. ^{[2
]}

Cho, Y. ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] ROHM Co Ltd, Ukyo Ku, Kyoto 6158585, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 08期

关键词：

SCANNING CAPACITANCE MICROSCOPY; SPREADING RESISTANCE MICROSCOPY; DEVICES; DELINEATION; GATE;

D O I：

10.1063/1.4893959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dopant distribution and depletion layer in a cross-section of a SiC double diffused MOSFET (DMOSFET) is visualized using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM), which is a form of scanning probe microscopy. Analysis of the data acquired by SHO-SNDM clarifies the dopant distribution in great detail, which is otherwise difficult to detect using conventional scanning capacitance microscopy or scanning microwave microscopy. Moreover, the newly developed SHO-SNDM method enables us to distinguish the n-type, p-type, and depletion layer regions very clearly, and they are found to be consistent with the general DMOSFET structure. (C) 2014 AIP Publishing LLC.

引用

页数：7

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