Progress of Thin Film Transistor Technology - Large-Area Mass Production and Beyond

被引:0
作者
Kuo, Yue [1 ]
机构
[1] Texas A&M Univ, Thin Film Nano & Microelect Res Lab, College Stn, TX 77843 USA
来源
PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS | 2013年
关键词
A-SI-H; PECVD SILICON-NITRIDE; DEPOSITION; DEVICE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thin film transistor liquid crystal is one of the most successful electronic products in the last two decades. It affects almost everyone's daily life throughout the world. The first report of the amorphous silicon thin film transistor triggered the revolution of the field. In the past 30 years, the thin film transistor technology has progressed dramatically, especially in the large-area, low-temperature, high-throughput fabrication process. Recently, new types of TFTs with the improved mobility, flexible material properties, or novel structures have been reported for applications in displays, sensors, imagers, etc. The uniqueness of the thin film transistor technology lies in the versatile structure and composing materials with few limits on the substrate material and size. Although applications of thin film transistors are broader than those of ICs, these two technologies can complement each other.
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页码:5 / 8
页数:4
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