Cost-Effective Integration of RF-LDMOS Transistors in 0.13 μm CMOS Technology

被引：0
|
作者：
Mai, A. [1 ]
Ruecker, H. [1 ]
Sorge, R. [1 ]
Schmidt, D. [1 ]
Wipf, C. [1 ]
机构：
[1] IHP, D-15236 Frankfurt, Oder, Germany
来源：
2009 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUTS IN RF SYSTEMS, DIGEST OF PAPERS | 2009年
关键词：
Silicon RF-LDMOS; power devices; CMOS analog integrated circuits;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new cost-effective concept for RF-LDMOS transistors in a standard 0.13 mu m CMOS technology without process modifications is demonstrated. For the integration of the devices only standard implants of the RF-CMOS process are used. The devices have gate length of 0.35 mu m and share the 7nm gate oxide of the 3.3 V CMOS I/O devices. A breakdown voltage of 19 V and f(T)/f(MAX) values of 25GHz/55GHz, respectively are obtained.
引用
收藏
页码：189 / 192
页数：4
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