THREE-DIMENSIONAL GRAPHENE FIELD EFFECT TRANSISTORS AS SELF-POWERED VIBRATION SENSORS

被引：0

作者：

Li, Yuning ^{[1
]}

Sun, Jingye ^{[1
]}

Li, Shasha ^{[1
]}

Su, Fang ^{[2
]}

Yin, Weijie ^{[1
]}

Li, Xiuhan ^{[1
]}

Liu, Zewen ^{[3
]}

Deng, Tao ^{[1
]}

Wen, Yinghong ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing, Peoples R China

[2] Beijing Inst Fash & Technol, Beijing, Peoples R China

[3] Tsinghua Univ, Sch Integrated Circuits, Beijing, Peoples R China

来源：

2022 IEEE 35TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS CONFERENCE (MEMS) | 2022年

基金：

中国国家自然科学基金;

关键词：

Vibration sensor; Three-dimensional (3D); Graphene field-effect transistors (GFETs);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates a self-powered vibration sensor based on a three-dimensional (3D) graphene field effect transistor (GFET). A 3D microtubular cantilever structure is adopted to develop the piezoelectricity in single-layer graphene, where the inversion symmetry of the single-layer graphene is broken by the induced strain during the self-rolled-up process. A vibration response current up to 15.9 nA is obtained, with its frequency corresponding to the mechanical vibrational frequency, by applying zero gate and source-drain voltages to the GFET. The self-powered vibration sensor paves a new way to develop the 2D piezoelectric effect of graphene.

引用

页码：75 / 78

页数：4

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