Photoluminescent properties of undoped and Ce-doped HfO2 thin films prepared by magnetron sputtering

被引：11

作者：

Chen, Shuai ^{[1
]}

Liu, Zhengtang ^{[1
]}

Feng, Liping ^{[1
]}

Zhao, Xiaoru ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2014年 / 153卷

基金：

中国国家自然科学基金;

关键词：

Photoluminescence; HfO2; Thin films; Doped; HAFNIUM; OXIDE; LUMINESCENCE;

D O I：

10.1016/j.jlumin.2014.03.017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The undoped and Ce-doped HfO2 thin films synthesized by magnetron sputtering on silicon substrates were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photo-luminescence (PL). XRD measurements of these films showed that the crystalline structure depends on the doping concentration. The samples underwent a crystallographic change from monoclinic to cubic phase with increasing doping concentration. A violet PL band associated with oxygen vacancies was observed in undoped HfO2 at room temperature. While a blue PL band appeared after introducing cerium ion into the HfO2 host, which is ascribed to the well-known 5d-4f emission band of the cerium ion. (C) 2014 Elsevier B.V. All rights reserved.

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收藏

页码：148 / 151

页数：4

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