Photoluminescent properties of undoped and Ce-doped HfO2 thin films prepared by magnetron sputtering

被引：11
作者：
Chen, Shuai [1 ]
Liu, Zhengtang [1 ]
Feng, Liping [1 ]
Zhao, Xiaoru [1 ]
机构：
[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
来源：
JOURNAL OF LUMINESCENCE | 2014年 / 153卷
基金：
中国国家自然科学基金;
关键词：
Photoluminescence; HfO2; Thin films; Doped; HAFNIUM; OXIDE; LUMINESCENCE;
D O I：
10.1016/j.jlumin.2014.03.017
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The undoped and Ce-doped HfO2 thin films synthesized by magnetron sputtering on silicon substrates were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photo-luminescence (PL). XRD measurements of these films showed that the crystalline structure depends on the doping concentration. The samples underwent a crystallographic change from monoclinic to cubic phase with increasing doping concentration. A violet PL band associated with oxygen vacancies was observed in undoped HfO2 at room temperature. While a blue PL band appeared after introducing cerium ion into the HfO2 host, which is ascribed to the well-known 5d-4f emission band of the cerium ion. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：148 / 151
页数：4
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