Deep Levels in n-type 4H-SiC Epitaxial Schottky Detectors by Deep Level Transient Spectroscopy and Effects of Edge Termination on Energy Resolution

被引：0

作者：

Nguyen, Khai V. ^{[1
]}

Mannan, Mohammad A. ^{[1
]}

Mandal, Krishna C. ^{[1
]}

机构：

[1] Univ South Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

2014 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2014年

关键词：

4H-SiC; deep level transient spectroscopy; epitaxial layer; Schottky barrier detector; edge termination; SILICON-CARBIDE; DIODES;

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

High resolution Schottky barrier alpha detectors have been fabricated on 20 mu m n-type 4H-SiC epitaxial layers. The junction properties of the detectors were studied by current voltage (I-V) and capacitance-voltage (C-V) measurements. A thermionic emission model applied to the forward I-V characteristic revealed an effective surface barrier height of 1.72 eV and a diode ideality factor of 1.18 suggesting uniform spatial distribution of surface barrier height. The C-V measurements revealed a doping concentration of 1.8x10(14) cm(-3) which ensured a fully depleted (similar to 20 mu m) detector at bias voltages as low as similar to 70 V. Alpha spectroscopy measurements revealed an energy resolution of 0.5% for 5.48 MeV alpha particles. The performance of these detectors is limited by the presence of microscopic and macroscopic defects. Deep level transient spectroscopy (DLTS) studies revealed the presence of Ti(c), Z(1/2), and possible Cil defect centers. An improvement in detector resolution to similar to 0.3% was observed after edge termination while evaluating effects of surface defects on device performance.

引用

页数：5

共 22 条

[1] Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC [J].

Alfieri, G. ;

Kimoto, T. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)

[2] Deep levels in silicon carbide Schottky diodes [J].

Castaldini, A ;

Cavallini, A ;

Polenta, L ;

Nava, F ;

Canali, C ;

Lanzieri, C .

APPLIED SURFACE SCIENCE, 2002, 187 (3-4) :248-252

[3] High resolution alpha particle detection using 4H-SiC epitaxial layers: Fabrication, characterization, and noise analysis [J].

Chaudhuri, Sandeep K. ;

Zavalla, Kelvin J. ;

Mandal, Krishna C. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 728 :97-101

[4] Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach [J].

Chaudhuri, Sandeep K. ;

Zavalla, Kelvin J. ;

Mandal, Krishna C. .

APPLIED PHYSICS LETTERS, 2013, 102 (03)

[5] Electrical properties of the titanium acceptor in silicon carbide [J].

Dalibor, T ;

Pensl, G ;

Nordell, N ;

Schoner, A .

PHYSICAL REVIEW B, 1997, 55 (20) :13618-13624

[6]

Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO

[7]

2-0

[8] Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons [J].

Danno, Katsunori ;

Kimoto, Tsunenobu .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[9] Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers [J].

Gelczuk, L. ;

Dabrowska-Szata, M. ;

Sochacki, M. ;

Szmidt, J. .

SOLID-STATE ELECTRONICS, 2014, 94 :56-60

[10] Large-scale electronic structure calculations of vacancies in 4H-SiC using the Heyd-Scuseria-Ernzerhof screened hybrid density functional [J].

Hornos, Tamas ;

Gali, Adam ;

Svensson, Bengt G. .

SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 :261-+

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