Surface-extended x-ray absorption fine structure study of silicon deposited onto GaAs(110)

被引：3

作者：

Hasnaoui, ML ^{[1
]}

Flank, AM ^{[1
]}

Pompa, M ^{[1
]}

Lagarde, P ^{[1
]}

机构：

[1] CTR UNIV PARIS SUD,LURE,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.580060

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The system Si/GaAs(110) was studied by surface extended x-ray absorption fine structure at the silicon K edge, starting from a 0.5 monolayer (ML) coverage up to 3 ML. At very low coverages, the first adsorption site of the silicon has been determined to be above the center of the triangle formed by two arsenic and one gallium surface atoms. The growth mode of silicon on this surface obeys a modified version of the Stranski-Krastanov model: the formation of three-dimensional clusters appears at 2.5 ML and involves all the deposited silicon atoms. (C) 1996 American Vacuum Society.

引用

页码：2275 / 2281

页数：7

共 14 条

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