Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC

被引：1

作者：

Muraoka, Kosuke ^{[1
]}

Ishikawa, Seiji ^{[1
,2
]}

Sezaki, Hiroshi ^{[1
,2
]}

Tomonori, Maeda ^{[1
,2
]}

Yasuno, Satoshi ^{[3
]}

Koganezawa, Tomoyuki ^{[3
]}

Kuroki, Shin-Ichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 7398527, Japan

[2] Phenitec Semicond Corp, 150 Kinoko Cho, Okayama 7158602, Japan

[3] Japan Synchrotron Radiat Res Inst, 1-1-1 Kouto, Sayo, Hyogo 6795198, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 121卷

关键词：

Silicon carbide; Barium; Two-dimensional X-ray diffraction; Hard X-ray photoelectron spectroscopy; X-ray reflectivity; MOBILITY;

D O I：

10.1016/j.mssp.2020.105343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the thickness dependencies of SiO2/BaOx layers on the structural and interfacial properties of a layered gate dielectric on 4H-SiC. The deposition of the SiO2 layer on the BaOx layer changed the stoichiometry and distribution of Ba-silicate in the gate dielectric. Moreover, the interface trap density reduced with increasing SiO2 thickness. The crystal structure changed from amorphous to poly-crystalline with increasing BaOx thickness, indicating the existence of a critical thickness for crystallization. These results show that the properties of gate dielectric/SiC interfaces can be modified by varying the SiO2/BaOx layer thickness.

引用

页数：6

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