Negative magnetoresistance in boron-doped nanocrystalline diamond films

被引：10

作者：

Willems, B. L. ^{[1
]}

Zhang, G. ^{[1
]}

Vanacken, J. ^{[1
]}

Moshchalkov, V. V. ^{[1
]}

Janssens, S. D. ^{[2
]}

Williams, O. A. ^{[2
,3
]}

Haenen, K. ^{[2
,3
]}

Wagner, P. ^{[2
,3
]}

机构：

[1] Katholieke Univ Leuven, INPAC, B-3001 Louvain, Belgium

[2] Hasselt Univ, Inst Mat Res IMO, BE-3590 Diepenbeek, Belgium

[3] IMEC VZW, Div IMOMEC, BE-3590 Diepenbeek, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 03期

关键词：

boron; diamond; insulating thin films; magnetoresistance; GRANULAR AL-GE; SUPERCONDUCTOR TRANSITION;

D O I：

10.1063/1.3195045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the observation of a negative magnetoresistance (NMR) regime in boron-doped nanocrystalline diamond films at low temperatures. A comparative analysis of our experimental results and those reported for systems composed of superconducting granules embedded in an insulating matrix (also referred as granular films) suggest the presence of superconducting regions inside the insulating films as causing the NMR. By considering the latter scenario, the experimental observations are explained by modeling the systems as consisting of a distribution of superconducting granules whose global properties are tuned by the intergrain distance.

引用

页数：5

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