Identification of Raman-active phonon modes in oriented platelets of InN and polycrystalline InN

被引:29
|
作者
Dyck, JS
Kim, K
Limpijumnong, S
Lambrecht, WRL
Kash, K
Angus, JC
机构
[1] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
[2] Case Western Reserve Univ, Dept Chem Engn, Cleveland, OH 44106 USA
基金
美国国家科学基金会;
关键词
semiconductors; phonons; inelastic light scattering;
D O I
10.1016/S0038-1098(00)00078-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on micro-Raman studies on both randomly oriented polycrystals and groups of oriented, faceted platelets of indium nitride grown from the melt at subatmospheric pressures. Phonon modes were assigned as A(1)(TO) = 445, E-1(TO) = 472, E-2((2)) = 488, and A(1)(LO) = 588 cm(-1). The FWHM of the E-2((2)) peak of 2.5 cm(-1) is the narrowest reported to date for InN. The measured TO phonon frequencies were compared to those calculated from first principles and excellent agreement was found. The results are discussed in the context of previously reported Raman experiments on heteroepitaxial, and hence strained, layers of InN. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:355 / 360
页数:6
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