Method for extracting series resistance in MOS devices using Fowler-Nordheim plot

被引：14

作者：

Miranda, E ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 18期

关键词：

D O I：

10.1049/el:20045581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for determining the series resistance affecting the tunnelling current in MOS devices is presented. The proposed approach consists of considering the effect of the potential drop associated with this resistance on the Fowler-Nordheim tunnelling expression. The resistance is found by forcing the highest possible linearity of the Fowler-Nordheim plot.

引用

页码：1153 / 1154

页数：2

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