Stark-Localization-Limited Franz-Keldysh Effect in InAlAs Digital Alloys

被引：2
作者：
Yuan, Yuan [1 ]
Zheng, Jiyuan [1 ]
Sun, Keye [1 ]
Jones, Andrew H. [1 ]
Rockwell, Ann K. [2 ]
March, Stephen D. [2 ]
Shen, Yang [1 ]
Bank, Seth R. [2 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Elect & Comp Engn Dept, 351 McCormick Rd, Charlottesville, VA 22904 USA
[2] Univ Texas Austin, Elect & Comp Engn Dept, 1616 Guadalupe St, Austin, TX 78758 USA
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2019年 / 13卷 / 09期
关键词：
digital alloys; Franz-Keldysh effect; Stark localization; ELECTRIC-FIELD; ELECTROABSORPTION; SUPERLATTICES; DEPENDENCE;
D O I：
10.1002/pssr.201900272
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical absorption characteristics of the InAlAs digital alloy semiconductor are investigated. The external quantum efficiency of the InAlAs digital alloy is compared with that of the In0.52Al0.48As random alloy. Unlike the random alloy, the digital alloy exhibits electric-field-induced Stark localization, which increases the optical absorption and suppresses the Franz-Keldysh red shift of the optical absorption edge.
引用
收藏
页数：5
相关论文
共 42 条
  • [21] A method for characterizing effective intensity of Franz-Keldysh effect in (HgCd)Te detectors
    Li, ZD
    Ye, YT
    Wu, YF
    Shu, HH
    He, LL
    Li, DZ
    Wu, ZM
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2001, 20 (05) : 353 - 355
  • [22] Study of electroreflectance spectrum and Franz-Keldysh effect at Metal-GaAs interfaces
    Wang Bin
    Xu Xiao-xuan
    Qin Zhe
    Song Ning
    Zhang Cun-zhou
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28 (08) : 1701 - 1704
  • [23] Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect
    Maeda, Takuya
    Narita, Tetsuo
    Ueda, Hiroyuki
    Kanechika, Masakazu
    Uesugi, Tsutomu
    Kachi, Tetsu
    Kimoto, Tsunenobu
    Horita, Masahiro
    Suda, Jun
    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 59 - 62
  • [24] Analysis of modified Franz-Keldysh effect under influence of electronic intraband relaxation phenomena
    Kuwamura, Y
    Yamada, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (12A): : 6117 - 6125
  • [25] Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures
    Schmid, M.
    Kaschel, M.
    Gollhofer, M.
    Oehme, M.
    Werner, J.
    Ulbricht, K.
    Kasper, E.
    Schulze, J.
    INTEGRATED PHOTONICS: MATERIALS, DEVICES, AND APPLICATIONS II, 2013, 8767
  • [26] Influence of carrier scattering on Franz-Keldysh effect in near-surface region of n-type GaAs
    Sakai, M
    Shinohara, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1997, 66 (03) : 738 - 748
  • [27] Franz-Keldysh effect and exciton ionization in a short one-dimensional semiconductor quantum wire
    Zhang, TY
    Zhao, W
    OPTOELECTRONIC MATERIALS AND DEVICES FOR OPTICAL COMMUNICATIONS, 2005, 6020
  • [28] Towards Highly-Precise Tunable Electro-Modulator Based on Franz-Keldysh Effect
    Zielinska-Raczynska, Sylwia
    Ziemkiewicz, David
    Czajkowski, Gerard
    Karpinski, Karol
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (06):
  • [29] Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage
    Maeda, Takuya
    Okada, Masaya
    Ueno, Masaki
    Yamamoto, Yoshiyuki
    Horita, Masahiro
    Suda, Jun
    APPLIED PHYSICS EXPRESS, 2016, 9 (09)
  • [30] Franz-Keldysh effect of germanium-on-silicon p-i-n diodes within a wide temperature range
    Schmid, M.
    Kaschel, M.
    Gollhofer, M.
    Oehme, M.
    Werner, J.
    Kasper, E.
    Schulze, J.
    THIN SOLID FILMS, 2012, 525 : 110 - 114
12345